Qorvo: RF Power Transistor: RFG1M09180

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF Power Transistor, 0.7 - 1 GHz, 180 W, 20 dB, 48V, GaN, RF400-2
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RFG1M09180 Data Sheet
RoHS Compliance: Qorvo, RFG1M09180, RF Power Transistor, RF Power Transistor, 0.7 - 1 GHz, 180 W, 20 dB, 48V, GaN, RF400-2 (Rohs Compliant), RFMW Ltd (RFMW) Yes
Frequency Min:
0.7 GHz
Frequency Max:
1 GHz
Output Power:
180 W
20 dB
% typ. Efficiency:
Supply Voltage:
48 V
600 mA
Also Available
Part FunctionPart NumberDescription
Complementary Product RFG1M09090 Qorvo RF Power Transistor, 0.7 - 1 GHz, 90 W, 20 dB, 48V, GaN, RF400-2
Qorvo, RF Power Transistor, RFG1M09180, RFMW Ltd (RFMW)
700MHz to 1000MHz 180 Watt GaN Power Amplifier

The RFG1M09180 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 700MHz to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak-to-average ratio applications, these high performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M09180 is an input-matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.

1 - 24 $405.72
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250 - 499 $218.64
500 - 999 $209.63