Qorvo: RF Power Transistor: RF3934D

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF3934D
RF Power Transistor, DC to 4 GHz, 120 W, 13 dBm, 48V, GaN, DIE
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RF3934D Data Sheet
RoHS Compliance: Qorvo, RF3934D, RF Power Transistor, RF Power Transistor, DC to 4 GHz, 120 W, 13 dBm, 48V, GaN, DIE (Rohs Compliant), RFMW Ltd (RFMW) Yes
Export Status:
Specifications
Frequency Min:
0 GHz
Frequency Max:
4 GHz
Output Power:
120 W
Gain:
13 dB
% typ. Efficiency:
60
Supply Voltage:
48 V
Id:
440 mA
Package:
DIE
Process:
GaN
Qorvo, RF Power Transistor, RF3934D, RFMW Ltd (RFMW)
The RF3934D is a 48V, 120W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3934D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3934D is an unmatched 0.5mm gate, GaN transistor die suitable for many applications with > 51dBm saturated power, > 60% saturated drain efficiency, and > 13dB small signal gain at 2GHz.
Pricing
QtyPrice
1 - 24 $252.34
25 - 99 $206.46
100 - 249 $160.58
250 - 499 $114.70
500 - 999 $110.11
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