Qorvo: RF Power Transistor: RF3934

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF3934
RF Power Transistor, DC to 3.5 GHz, 120 W, 13 dB, 48 V, GaN, Ceramic, Unmatched
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RF3934 Data Sheet
RoHS Compliance: Qorvo, RF3934, RF Power Transistor, RF Power Transistor, DC to 3.5 GHz, 120 W, 13 dB, 48 V, GaN, Ceramic, Unmatched (Rohs Compliant), RFMW Ltd (RFMW) Yes
Export Status:
Specifications
Frequency Min:
0 GHz
Frequency Max:
3.5 GHz
Output Power:
120 W
Gain:
13 dB
% typ. Efficiency:
60
Supply Voltage:
48 V
Id:
440 mA
Package:
Ceramic
Process:
GaN
Qorvo, RF Power Transistor, RF3934, RFMW Ltd (RFMW)

120W GaN Wide-Band Power Amplifier

The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3934 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.

Pricing
Qty 
 
Availability
Available: 3
Call 1-877-367-7369 for Availability or Get a Quote
Qty