Qorvo: RF Power Transistor: RF3933

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF3933
RF Power Transistor, DC to 3.5 GHz, 90 W, 14 dB, 48 V, GaN, Ceramic, Unmatched
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RF3933 Data Sheet
RoHS Compliance: No
Export Status:
Specifications
Frequency Min:
0 GHz
Frequency Max:
3.5 GHz
Output Power:
90 W
Gain:
14 dB
% typ. Efficiency:
60
Supply Voltage:
48 V
Id:
310 mA
Package:
Flange
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Evaluation Board RF3933PCBA-411 Qorvo Evaluation board for RF3933, optimized for 2.14GHz; 48V
Complementary Product RF3933D Qorvo RF Power Transistor, DC to 4 GHz, 90 W, 13.5 dBm, 48V, GaN, DIE
The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3933 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.
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