Qorvo: RF Power Transistor: RF3932

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF3932
RF Power Transistor, DC to 3GHz, 60W, 48V, GaN, Unmatched
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RF3932 Data Sheet
RoHS Compliance: No
Specifications
Frequency Min:
0 GHz
Frequency Max:
3 GHz
Output Power:
60 W
Gain:
14 dB
% typ. Efficiency:
68
Supply Voltage:
48 V
Id:
220 mA
Package:
Flange
Process:
GaN
The RF3932 is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN)semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3932 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished by incorporating simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.

Features:
  • Broadband Operation DC to 3.5GHz
  • Advanced GaN HEMT Technology
  • Advanced Heat-Sink Technology
  • Small Signal Gain = 14dB at 2GHz
  • 48V Operation Typical Performance
    • Output Power 75W at P3dB
    • Drain Efficiency 68% at P3dB
    • -40° C to 85° C Operating Temperature
  • Pricing
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    Availability
    Available: 2
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