Qorvo: RF Power Transistor: RF3931D

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF3931D
RF Power Transistor, DC to 4 GHz, 30 W, 14 dBm, 48V, GaN, DIE
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RF3931D Data Sheet
RoHS Compliance: Qorvo, RF3931D, RF Power Transistor, RF Power Transistor, DC to 4 GHz, 30 W, 14 dBm, 48V, GaN, DIE (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0 GHz
Frequency Max:
4 GHz
Output Power:
30 W
Gain:
14 dB
% typ. Efficiency:
65
Supply Voltage:
48 V
Id:
150 mA
Package:
DIE
Process:
GaN
Qorvo, RF Power Transistor, RF3931D, RFMW Ltd (RFMW)
The RF3931D is a 48V, 30W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, Industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3931D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3931D is an unmatched 0.5 µm gate, GaN transistor die suitable for many applications with >47dBm saturated power, >65% drain efficiency, and >14dB small signal gain at 2GHz.
Pricing
QtyPrice
1 - 24 $85.58
25 - 99 $70.02
100 - 249 $54.46
250 - 499 $38.90
500 - 999 $37.34
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