Qorvo: RF Power Transistor: RF3931

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF3931
RF Power Transistor, DC to 3 GHz, 30 W, 15 dB, 48 V, GaN, Ceramic, Unmatched
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RF3931 Data Sheet
RoHS Compliance: No
Specifications
Frequency Min:
0 GHz
Frequency Max:
3 GHz
Output Power:
30 W
Gain:
15 dB
% typ. Efficiency:
65
Supply Voltage:
48 V
Id:
130 mA
Package:
Flange
Process:
GaN
The RF3931 is a 48V 30W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3931 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.

Features:
  • Broadband Operation DC to 3.5GHz
  • Advanced GaN HEMT Technology
  • Advanced Heat-Sink Technology
  • Gain = 15dB at 2GHz
  • 48V Operation Typical  Performance at 900MHz 
    • Output Power 50W
    • Drain Efficiency 65%
    • -40°C to 85°C Operation
  • Pricing
    Qty