Qorvo: RF Power Transistor: RF3930D

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

RF3930D
RF Power Transistor, DC to 4 GHz, 10 W, 19 dBm, 48V, GaN, DIE
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RF3930D Data Sheet
RoHS Compliance: Qorvo, RF3930D, RF Power Transistor, RF Power Transistor, DC to 4 GHz, 10 W, 19 dBm, 48V, GaN, DIE (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0 GHz
Frequency Max:
4 GHz
Output Power:
10 W
Gain:
19 dB
% typ. Efficiency:
70
Supply Voltage:
48 V
Id:
55 mA
Package:
DIE
Process:
GaN
Qorvo, RF Power Transistor, RF3930D, RFMW Ltd (RFMW)
 

The RF3930D is a 48V, 10W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RF3930D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper packaging and assembly. The RF3930D is an unmatched 0.5um gate, GaN transistor die suitable for many applications with >42dBm saturated power, >70% saturated drain efficiency, and >19dB small signal gain at 2GHz.


Pricing
QtyPrice
1 - 24 $67.10
25 - 99 $54.90
100 - 249 $42.70
250 - 499 $30.50
500 - 999 $29.28
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