Qorvo: Amplifier: RF3833

Amplifier, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

Amplifier, Power, 0.03 - 2GHz, 44dBm, 13dB, GaN, Wide-Band, 48 V
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: RF3833 Data Sheet
RoHS Compliance: No
Frequency Min:
0.03 GHz
Frequency Max:
2 GHz
44 dBm
13 dB
Supply Voltage \ Vd:
48 V
Gain Flatness:
1 ±dB
Also Available
Part FunctionPart NumberDescription
Evaluation Board RF3833PCBA-410 Qorvo Evaluation Board for RF3833
Evaluation Board RF3833PCBA-411 Qorvo Evaluation board for RF3833, 200- 1800 MHz
The RF3833 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density gallium nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design. The RF3833 is an input matched GaN transistor packaged in an air cavity copper package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.

  • Advanced GaN HEMT Technology
  • Output Power of 25W
  • Advanced Heat-Sink Technology
  • 30MHz to 2000MHz Instantaneous Bandwidth
  • Input Internally Matched to 50Ω
  • 48V Operation Typical Performance
    • POUT  43dBm
    • Gain  13dB
    • Power Added Efficiency 45% (30MHz to 2000MHz)
    • Power Added Efficiency 55% (200MHz to 1800MHz)
  • Pricing
    Available: 73
    Call 1-877-367-7369 for Availability or Get a Quote