The RF2312 is a general purpose low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as an easily cascadable 75 ohm gain block. The gain flatness of better than 0.5 dB from 5 MHz to 1000 MHz and the high linearity make this part ideal for cable TV applications. Other applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2500 MHz. The device is self-contained with 75 ohm input and output impedances and requires only two external DC biasing elements to operate as specified.