The MwT-PH8 is an AlGaAs/InGaAs PHEMT device with nominal 0.3 micron gate length and 1200 micron gate width. Ideally suited for applications requiring high-gain and power up to 20 GHz with power outputs ranging from 800 to 1000 mW. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. Devices from each wafer are screened to insure reliability. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for increased durability.