Qorvo: RF Power Transistor: TGF2965-SM

RF Power Transistor, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

TGF2965-SM
RF Power Transistor, 0.03 to 3 GHz, 5 W, 18 dB, 32 V, GaN, Plastic QFN
Manufacturer: Qorvo
Status: Standard
Data Sheet: TGF2965-SM Data Sheet
RoHS Compliance: Qorvo, TGF2965-SM, RF Power Transistor, RF Power Transistor, 0.03 to 3 GHz, 5 W, 18 dB, 32 V, GaN, Plastic QFN (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0.03 GHz
Frequency Max:
3 GHz
Output Power:
5 W
Gain:
18 dB
% typ. Efficiency:
63
Supply Voltage:
32 V
Id:
30 mA
Package:
QFN 3x3mm
Process:
GaN
Also Available
Part FunctionPart NumberDescription
Evaluation Board TGF2965-SM-EVB2 Qorvo Evaluation board for TGF2965-SM
Complementary Product TGF3015-SM Qorvo RF Power Transistor, 0.03- 3 GHz, 10 W, 17.1 dB, 32 V, GaN, Plastic
Qorvo, RF Power Transistor, TGF2965-SM, RFMW Ltd (RFMW)

The Qorvo TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Pricing
QtyPrice
1 - 24 $45.00
25 - 99 $40.00
100 - 249 $35.00
250 - 499 $32.00
500 - 999 $30.00
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Availability
Available: 30
Call 1-877-367-7369 for Availability or Get a Quote
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