The TQP7M9101 is a high-linearity driver amplifier in a standard SOT-89 surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies with +39.5 dBm OIP3 and +25dBm P1dB while only consuming 87 mA quiescent current. All devices are 100% RF and DC tested.
The TQP7M9101 incorporates on-chip features that differentiate it from other products in the market. The RF output is internally matched in to 50 ohms. Only input matching is required for optimal performance in specific frequency bands making the component easy for design engineers to implement in their systems. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 2 HBM ESD rating.
The TQP7M9101 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device is an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G / 4G base stations.