Qorvo: Transistors: CLY2

Transistors, Amplifiers, Passives, Control Components, Signal Generation, Integrated Modules and Chipsets, Test and Measurement, Discrete Semiconductor, Design Kit, RFMW

CLY2
Transistor, Low Noise, 0.4 to 3 GHz, 23.5 dBm, 14.5 dB, 5 V, MW6, GaAs
Manufacturer: Qorvo
Status: Obsolete
Data Sheet: CLY2 Data Sheet
RoHS Compliance: Qorvo, CLY2, Transistors, Transistor, Low Noise, 0.4 to 3 GHz, 23.5 dBm, 14.5 dB, 5 V, MW6, GaAs (Rohs Compliant), RFMW Ltd (RFMW) Yes
Specifications
Frequency Min:
0.4 GHz
Frequency Max:
3 GHz
Output Power:
23.5 dBm
Gain:
14.5 dB
% typ. Efficiency:
55
Supply Voltage:
5 V
Package:
MW6
Noise Figure:
1.48 dB
Material:
GaAs
The TriQuint CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its easy matching and excellent linearity. The CLY2 exhibits +23.5 dBm output power with +3 V Vds at 1.8 GHz with an associated gain of 14.5 dB. Power added efficiencies to 55% are achievable.

Features:
  • For frequencies up to 3 GHz
  • Wide operating voltage range: 2 to 6 V
  • Pout: 23.5 dBm typical at VD = 3 V, f = 1.8 GHz
  • High efficiency: better than 55%
  • Nfmin 0.79 dB typical at 900 MHz
  • Low cost
  • Pricing
    QtyPrice
    1 - 24 $5.18
    25 - 99 $3.97
    100 - 249 $3.10
    250 - 499 $2.57
    500 - 999 $2.31
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