RFSW2100D

The RFSW2100D is a GaN-on-SiC high power discrete RF switch designed for military and commercial wireless infrastructure, industrial/scientific/medical and general purpose broadband RF control and switching applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RFSW2100D is able to achieve low insertion loss and high isolation with better than 10dB return loss across a wide band from 30MHz to 6GHz with proper die attach and heat sinking. The RFSW2100D is an SPDT RF switch suitable for many applications with 75W CW input power compression capability under controlled conditions, VSWR (3:1) and 25°C T CASE as well as ~0.25dB insertion loss and ~40dB small signal isolation at 2GHz.

Features:

Broadband Operation 30MHz to 6000MHz

Advanced GaN HEMT Technology

2GHz Typical Performance

• Insertion Loss ~0.25dB
• Isolation ~40dB