RFMW

Status: Discontinued | Datasheet: Request Data Sheet   | RoHS Compliance: Rohs Compliant
The RFHA1101 is a 28V, 4.3W, GaN on SiC high power discrete amplifier die-on-carrier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RFHA1101 is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper heat sinking and assembly. The RFHA1101 is an unmatched 0.5μm gate, GaN transistor die suitable for many applications with >36dBm 3dB-compressed power, >60% 3dB-compressed drain efficiency, and >21dB small signal gain at 2GHz.

Features:
  • Broadband Operation DC to 10GHz
  • Advanced GaN HEMT Technology
  • Small Signal Gain=21.4dB at 2.14GHz 28V
  • Typical Performance
    • Output Power 4.3W at P3dB
    • Drain Efficiency 60% at P3dB
    • Part Number:
    RFHA1101
    Manufacturer:
    Qorvo
    Frequency Min:
    0 GHz
    Frequency Max:
    10 GHz
    Output Power:
    4.26 W
    Gain:
    36.3 dB
    % Typ Efficiency:
    60
    Supply Voltage:
    28 V
    Id:
    44 mA
    Package:
    Die on Carrier
    Process:
    GaN
    Type:
    RF Power Discrete Transistors
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