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RFHA1042

Model Number: RFHA1042

RF Power Transistor from Qorvo

RF Power Transistor, 225 to 450 MHz, 125 W, 18.5 dB, 48V, Flange, GaN

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

The RFHA1042 is optimized for military communications, commercial wireless infrastructure and general purpose applications in the 225MHz to 450MHz frequency band. Using an advanced 48V high power density gallium nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve 125W power with high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFHA1042 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.

Part Number: RFHA1042
Manufacturer: Qorvo
Frequency Min: 0.225 GHz
Frequency Max: 0.45 GHz
Output Power: 125 W
Gain: 18.5 dB
% Typ Efficiency: 60
Supply Voltage: 48 V
Id: 600 mA
Package: Flange
Process: GaN
Type: RF Power Discrete Transistors

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Product Specifications For RFHA1042 RF Power Transistor

Part Number: RFHA1042 Manufacturer: Qorvo Product Description: RF Power Transistor, 225 to 450 MHz, 125 W, 18.5 dB, 48V, Flange, GaN

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RFHA1042

RF Power Transistor from Qorvo

RF Power Transistor, 225 to 450 MHz, 125 W, 18.5 dB, 48V, Flange, GaN

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RFHA1042

RF Power Transistor from Qorvo

RF Power Transistor, 225 to 450 MHz, 125 W, 18.5 dB, 48V, Flange, GaN

Technical Inquiry Request for RFHA1042 RF Power Transistor

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