Part number RFHA1025 Product Type RF Power Transistor from Manufacturer Qorvo

Status: Discontinued | Datasheet: Request Data Sheet   | RoHS Compliance: Rohs Compliant

280W GaN Wideband Pulsed Power Amplifier

The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density gallium nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.

Part Number:
RFHA1025
Manufacturer:
Qorvo
Frequency Min:
0.96 GHz
Frequency Max:
1.215 GHz
Output Power:
280 W
Gain:
17 dB
% Typ Efficiency:
55
Supply Voltage:
50 V
Id:
440 mA
Package:
Ceramic Flange
Process:
GaN
Type:
RF Power Discrete Transistors
No Content Available

Technical Inquiry Request for RFHA1025 RF Power Transistor

Fields marked with * are required.
Product Specifications For RFHA1025 RF Power Transistor
Design Information
Contact Information


Availability
In Stock
0
Need products sooner?
Pricing
Pricing Available Upon Request. Request a Pricing Quote
Product Notices
No Current Notices