GaN Wide-Band Pulsed Power Amplifier
The RFHA1020 is a 50V, 280W high power discrete amplifier designed for L-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.
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Part Number:
RFHA1020
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Manufacturer:
Qorvo
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Frequency Min:
1.2 GHz
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Frequency Max:
1.4 GHz
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Output Power:
280 W
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Gain:
15 dB
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% Typ Efficiency:
55
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Supply Voltage:
50 V
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Id:
440 mA
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Package:
Flange
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Process:
GaN
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Type:
RF Power Discrete Transistors
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| Description | Units Per Format | Available |
| Description | Units Per Format | Available |