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RFHA1003

Model Number: RFHA1003

Amplifier from Qorvo

Amplifier, 30 - 512 MHz, 39 dBm P3dB, 19dB, 28V, SOIC-8, GaN

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance:

The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1003 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.

Part Number: RFHA1003
Manufacturer: Qorvo
Frequency Min: 0.03 GHz
Frequency Max: 0.512 GHz
P1dB: 39.5 dBm
Gain: 19 dB
Supply Voltage \ Vd Max: 28 V
Quiescent Current \ Id: 55 mA
Package: SOIC-8
Power Added Efficiency: 65 %

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Product Specifications For RFHA1003 Amplifier

Part Number: RFHA1003 Manufacturer: Qorvo Product Description: Amplifier, 30 - 512 MHz, 39 dBm P3dB, 19dB, 28V, SOIC-8, GaN

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RFHA1003

Amplifier from Qorvo

Amplifier, 30 - 512 MHz, 39 dBm P3dB, 19dB, 28V, SOIC-8, GaN

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RFHA1003

Amplifier from Qorvo

Amplifier, 30 - 512 MHz, 39 dBm P3dB, 19dB, 28V, SOIC-8, GaN

Technical Inquiry Request for RFHA1003 Amplifier

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