120W GaN Wide-Band Power Amplifier
The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3934 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.
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Part Number:
RF3934
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Manufacturer:
Qorvo
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Export Status:
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Frequency Min:
0 GHz
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Frequency Max:
3.5 GHz
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Output Power:
120 W
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Gain:
13 dB
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% Typ Efficiency:
60
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Supply Voltage:
48 V
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Id:
440 mA
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Package:
Ceramic
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Process:
GaN
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Type:
RF Power Discrete Transistors
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| Description | Units Per Format | Available |
| Description | Units Per Format | Available |