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2N5917

2N Transistors from P1dB

Transistor, RF Power, 2 Watts, 400 MHz, 1GHz, 28 V

Status: Standard | Datasheet: Request Data Sheet | RoHS Compliance:

Part Number: 2N5917
Manufacturer: P1dB
Frequency Max: 1 GHz
Output Power: 2 W
Gain: 5 dB
Supply Voltage: 28 V
Process: Silicon
Type: RF Power Discrete Transistors

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Product Specifications For 2N5917 RF Power Transistor

Part Number: 2N5917 Manufacturer: P1dB Product Description: Transistor, RF Power, 2 Watts, 400 MHz, 1GHz, 28 V

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Description	Units Per Format	Available

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2N5917

2N Transistors from P1dB

Transistor, RF Power, 2 Watts, 400 MHz, 1GHz, 28 V

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2N5917

2N Transistors from P1dB

Transistor, RF Power, 2 Watts, 400 MHz, 1GHz, 28 V

Technical Inquiry Request for 2N5917 RF Power Transistor

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