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BLT80,115

RF Power Transistor from NXP

RF Power Transistor, 0.005 to 0.9 GHz, 0.8 W, 6 dB, 7.5 V, BiPolar, SOT-223

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

Part Number: BLT80,115
Manufacturer: NXP
Frequency Min: 0.005 GHz
Frequency Max: 0.9 GHz
Output Power: 0.8 W
Gain: 6 dB
% Typ Efficiency: 60
Supply Voltage: 7.5 V
Package: SOT-223
Process: BiPolar
Type: RF Power Discrete Transistors

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Product Specifications For BLT80,115 RF Power Transistor

Part Number: BLT80,115 Manufacturer: NXP Product Description: RF Power Transistor, 0.005 to 0.9 GHz, 0.8 W, 6 dB, 7.5 V, BiPolar, SOT-223

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Description	Units Per Format	Available

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BLT80,115

RF Power Transistor from NXP

RF Power Transistor, 0.005 to 0.9 GHz, 0.8 W, 6 dB, 7.5 V, BiPolar, SOT-223

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BLT80,115

RF Power Transistor from NXP

RF Power Transistor, 0.005 to 0.9 GHz, 0.8 W, 6 dB, 7.5 V, BiPolar, SOT-223

Technical Inquiry Request for BLT80,115 RF Power Transistor

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